Electrical properties of Langmuir-Blodgett thin films using calixarene molecules

dc.contributor.authorÖzbek, Zikriye
dc.contributor.authorÇapan, Rifat
dc.contributor.authorSarı, Hüseyin
dc.contributor.authorUzunoğlu, Tayfun
dc.contributor.authorDavis, Frank
dc.date.accessioned2019-10-16T10:41:37Z
dc.date.available2019-10-16T10:41:37Z
dc.date.issued2009en_US
dc.departmentFakülteler, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionÇapan, Rifat (Balikesir Author)en_US
dc.description.abstractCalix[8]acid/calix[4]amine alternate layer Metal-Langmuir-Blodgett film-Metal (M/LB/M) structures were fabricated onto an aluminized glass substrate. Film deposition results indicated that these molecules are suitable to deposit with a highly ordered alternate layer structure. Studies were made of the nano-layer structures' electrical properties such as I-V and C-f. By analyzing I-V curves and assuming a Schottky conduction mechanism, the barrier height was found to be 0.67 eV.en_US
dc.identifier.endpage1415en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-75949086793
dc.identifier.scopusqualityQ4
dc.identifier.startpage1412en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12462/6876
dc.identifier.volume11en_US
dc.identifier.wosWOS:000271525200014
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCalixareneen_US
dc.subjectLangmuir-Blodgett Thin Filmsen_US
dc.subjectElectrical Propertiesen_US
dc.titleElectrical properties of Langmuir-Blodgett thin films using calixarene moleculesen_US
dc.typeArticleen_US

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