Electrical properties of Langmuir-Blodgett thin films using calixarene molecules

Abstract

Calix[8]acid/calix[4]amine alternate layer Metal-Langmuir-Blodgett film-Metal (M/LB/M) structures were fabricated onto an aluminized glass substrate. Film deposition results indicated that these molecules are suitable to deposit with a highly ordered alternate layer structure. Studies were made of the nano-layer structures' electrical properties such as I-V and C-f. By analyzing I-V curves and assuming a Schottky conduction mechanism, the barrier height was found to be 0.67 eV.