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dc.contributor.authorTeke, Ali
dc.date.accessioned2019-05-16T19:39:20Z
dc.date.available2019-05-16T19:39:20Z
dc.date.issued2002
dc.identifier.issn1300-0101
dc.identifier.urihttps://hdl.handle.net/20.500.12462/5323
dc.descriptionTeke, Ali (Balikesir Author)en_US
dc.description.abstractWe report on interference peaks in double axis x-ray rocking curves of tunable wavelength hot electron light emitters. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side of the junction, a construction known as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure-Type 2). The interference has been shown to strongly depend on the periodicy of the device structure. Experimental curves are compared with simulated rocking curves. Some structural parameters, such as total epilayer thickness, composition ratio and quantum well width and barrier width were obtained. It has been shown that double axis x-ray diffraction is a very helpful for the device designer as well as the crystal grower.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectX-Ray Diffractionen_US
dc.subjectUygulamalıen_US
dc.titleStructural Analysis of a GaAs/AlxGa1−x As Hot Electron Light Emitter Using Double Axis X-Ray Diffractionen_US
dc.typearticleen_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.contributor.departmentFen-Edebiyat Fakültesien_US
dc.identifier.volume26en_US
dc.identifier.issue3en_US
dc.identifier.startpage199en_US
dc.identifier.endpage207en_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US


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