Investigation of dielectric properties of heterostructures based on ZnO structures

Abstract

The voltage and frequency dependence of dielectric constant epsilon', dielectric loss epsilon", electrical modulus M", M', loss tangent tan delta and AC electrical conductivity sigma(AC) of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and rho-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100 kHz, 500 kHz and 1 MHz in this work. While the values of epsilon', epsilon", tan delta and sigma(AC) decreased, the values of M' and M '' increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.