Neural network estimations of annealed and non-annealed Schottky diode characteristics at wide temperatures range

Abstract

In this study, Artificial Neural Network (ANN) model has been proposed to characterize the annealed and the non-annealed Schottky diode from experimental data. The experimental current values of Ni/n-type 6H–SiC Schottky diode for the voltages applied to the diode terminal starting from 80 K with 20 K steps up to 500 K temperature were measured for both non-annealed and annealed Schottky diodes. The applied voltage has been varied starting from -2 V with 10 mV steps up to +2 V for each temperature value. The modeling performance has been assessed according to the varying number of neurons in the hidden layer, starting from 5 to 50 neurons, thereafter the optimum number of neurons has been obtained for both annealed and non-annealed ANN models. The minimum Root Mean Square Error (RMSE) and Mean Absolute Error (MAE) indices values for both annealed and non-annealed diodes have been obtained with 40 neurons for both the training and test phase.