Monte Carlo calculations of low energy positrons in silicon

Abstract

Theoretical data for positron scattering from a thin silicon film and semi-infinite silicon are presented as a function of incident and outgoing angles and energies. These theoretical data of the scattering processes of low energy positrons penetrating into silicon were performed by Monte Carlo simulation. The simulation is based on the use of different types of differential cross sections for individual elastic and inelastic scattering i) inelastic scattering; Gryzinski's excitation function to simulate the energy loss and Liljequist's model to calculate the inelastic scattering cross section, ii) elastic scattering; the screened Rutherford differential cross section with the spin-relativistic factor. In calculations on positron traversing matter, it is important to know the transmission through medium, their path lengths, and their energy and angular distribution through matter. The simulation results are well agreed with experiments.