PbO Based MIS Nanostructure Device C-V and I-V Characteristics; Calculation Techniques, Comparisons

Abstract

The electrical properties of an Al/PbO/p-Si nanostructure forming PbO based diode of MIS-type (metal-insulator semiconductor) diode have been investigated. This particular diode structure is relatively new and has limited documentation in the existing literature. The prepared heterostructure, whose capacitance and current-voltage (C-V and I-V) characteristics were measured at room temperature in dark conditions. Key parameters such as the ideality factor n, barrier height ?b and series resistance Rs were calculated using multiple methods, including the Standard, Norde, Lien-So-Nicolet, and Cheung techniques. These parameters provided insight into the molecular dynamics influencing the electrical characteristics of the diode. The annealing process at 290°C for 20 minutes was found to have a significant impact on the electrical behaviour of the sample. This study highlights the potential of PbO-based diodes for use in high-performance nanostructure devices.