A study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol-gel technique

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dc.authorid0000-0001-9785-4990en_US
dc.authorid0000-0002-5724-516Xen_US
dc.authorid0000-0002-6241-6314en_US
dc.contributor.authorTurgut, Güven
dc.contributor.authorKeskenler, Eyüp Fahri
dc.contributor.authorAydın, Serdar
dc.contributor.authorDoğan, Seydi
dc.contributor.authorDuman, Songül
dc.contributor.authorSönmez, Erdal
dc.contributor.authorEsen, Bayram
dc.contributor.authorDüzgün, Bahattin
dc.date.accessioned2019-10-30T07:30:12Z
dc.date.available2019-10-30T07:30:12Z
dc.date.issued2013en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn this paper, we investigated the morphological, optical and electrical properties of sol-gel spin coated ZnS film and device performance of fabricated Al/ZnS/p-Si/Al heterojunction diode. AFM images showed that surface morphology of the film was smooth which had 2.17 nm surface rougness, almost homogenous and dense. The optical band gap value of the ZnS film was found to be 3.83 eV. From electrical studies, it was found that Al/ZnS/p-Si/Al heterojunction diode showed a rectification behavior; and its ideality factor, barrier height and the series resistance values were calculated to be 2.34, 0.77 eV and 12.3-12.5 k Omega respectively. The results show that Al/ZnS/p-Si/Al diode is successfully fabricated using the sol-gel spin coating technique.en_US
dc.identifier.doi10.1016/j.matlet.2013.03.125
dc.identifier.endpage108en_US
dc.identifier.issn0167-577X
dc.identifier.scopus2-s2.0-84880080264
dc.identifier.scopusqualityQ1
dc.identifier.startpage106en_US
dc.identifier.urihttps://doi.org/10.1016/j.matlet.2013.03.125
dc.identifier.urihttps://hdl.handle.net/20.500.12462/9351
dc.identifier.volume102en_US
dc.identifier.wosWOS:000320148900031
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science BVen_US
dc.relation.ispartofMaterials Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectAtomic Force Microscopyen_US
dc.subjectContactsen_US
dc.subjectSol-Gel Preparationen_US
dc.subjectThin Filmsen_US
dc.titleA study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol-gel techniqueen_US
dc.typeArticleen_US

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