Photoionization study of deep centers in gan/algan multiple quantum wells

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dc.authorid0000-0001-9785-4990en_US
dc.contributor.authorZhang, S. K.
dc.contributor.authorWang, W. B.
dc.contributor.authorAlfano, R. R.
dc.contributor.authorTeke, Ali
dc.contributor.authorDoğan, Seydi
dc.contributor.authorJohnstone, D. J.
dc.contributor.authorMorkoc, H.
dc.date.accessioned2019-09-02T06:33:52Z
dc.date.available2019-09-02T06:33:52Z
dc.date.issued2010en_US
dc.departmentFakülteler, Fen-Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionTeke, Ali (Balikesir Author)en_US
dc.description.abstractTransient photocapacitance (TPC) measurements were performed to investigate deep centers in GaN/AlGaN multiple quantum wells. The influence of the persistent photovoltaic effect was successfully separated during the TPC experiments. The resolution obtained by the TPC measurements is much better than that of steady-state photocapacitance. The spectral dependence of photoionization cross section of deep centers in GaN is quantitatively determined in the energy range from 1.68 to 3.30 eV. The absolute values of photoionization cross sections of these centers are found to be of the order of 10(-15)-10(-14) cm(2).en_US
dc.identifier.doi10.1116/1.3268613
dc.identifier.issn2166-2746
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-84905937714
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1116/1.3268613
dc.identifier.urihttps://hdl.handle.net/20.500.12462/6112
dc.identifier.volume28en_US
dc.identifier.wosWOS:000278182700085
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherA V S Amer Inst Physicsen_US
dc.relation.ispartofJournal of Vacuum Science & Technology Ben_US
dc.relation.publicationcategoryMakale- Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAluminium Compoundsen_US
dc.subjectGallium Compoundsen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectPhotocapacitanceen_US
dc.subjectPhotoionisationen_US
dc.subjectPhotovoltaic Effectsen_US
dc.subjectSemiconductor Quantum Wellsen_US
dc.subjectWide Band Gap Semiconductorsen_US
dc.titlePhotoionization study of deep centers in gan/algan multiple quantum wellsen_US
dc.typeArticleen_US

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