Microstructural and electrical studies on diamond films

Abstract

X-ray diffraction, atomic force microscopy and electrical studies were performed on 2-3 mu m thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline having a grain size of 32.1 nm. From room temperature current-voltage measurements, it was found that the charge transport mechanism was due to the thermionic emission over the potential barrier of 1.3 eV.