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dc.contributor.authorTurgut, Güven
dc.contributor.authorKeskenler, Eyüp Fahri
dc.contributor.authorAydın, Serdar
dc.contributor.authorYılmaz, Mehmet
dc.contributor.authorDoğan, Seydi
dc.contributor.authorDüzgün, Bahattin
dc.date.accessioned2019-11-20T06:59:54Z
dc.date.available2019-11-20T06:59:54Z
dc.date.issued2013en_US
dc.identifier.issn0031-8949
dc.identifier.urihttps://doi.org/10.1088/0031-8949/87/03/035602
dc.identifier.urihttps://hdl.handle.net/20.500.12462/9933
dc.descriptionDoğan, Seydi (Balikesir Author)en_US
dc.description.abstractF and Nb + F co-doped SnO2 thin films were deposited on glass substrates by the spray pyrolysis method. The microstructural, morphological, electrical and optical properties of the 10 wt% F doped SnO2 (FTO) thin films were investigated specifically for niobium (Nb) doping in the range of 0-4 at.% with 1 at.% steps. As shown by the x-ray diffraction patterns, the films exhibited a tetragonal cassiterite structure with (200) preferential orientation. It was observed that grain sizes of the films for (200) and (301) peaks depended on the Nb doping concentration and varied in the range of 25.11-32.19 and 100.6-183.7 nm, respectively. The scanning electron microscope (SEM) micrographs showed that the FTO films were made of small pyramidal grains, while doubly doped films were made of small pyramidal grains and big polyhedron grains. From electrical studies, although 1 at.% Nb doped FTO films have the lowest sheet resistance and resistivity values, the highest figure-of-merit and optical band gap values obtained for FTO films were 16.2x10(-2) Omega(-1) and 4.21 eV, respectively. Also, infrared reflectivity values of the films were in the range of 97.39-98.98%. These results strongly suggest that these films are an attractive candidate for various optoelectronic applications and for photothermal conversion of solar energy.en_US
dc.language.isoengen_US
dc.publisherIop Publishing Ltden_US
dc.relation.isversionof10.1088/0031-8949/87/03/035602en_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectOxide Thin-Filmsen_US
dc.subjectTin Oxideen_US
dc.subjectSubstrate-Temperatureen_US
dc.subjectPhysical-Propertiesen_US
dc.subjectOptoelectronic Propertiesen_US
dc.subjectFluorineen_US
dc.subjectPyrolysisen_US
dc.subjectSurfaceen_US
dc.subjectConductivityen_US
dc.subjectParametersen_US
dc.titleAn investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films(en_US
dc.typearticleen_US
dc.relation.journalPhysica Scriptaen_US
dc.contributor.departmentMühendislik - Mimarlık Fakültesien_US
dc.contributor.authorID0000-0001-9785-4990en_US
dc.contributor.authorID0000-0002-5724-516Xen_US
dc.contributor.authorID0000-0002-4368-8453en_US
dc.identifier.volume87en_US
dc.identifier.issue3en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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