| dc.contributor.author | Chaure, Shweta N. | |
| dc.contributor.author | Chaure, Nandu B. | |
| dc.contributor.author | Hassan, Aseel K. | |
| dc.contributor.author | Ray, Asım Kumar | |
| dc.contributor.author | Reehal, Haricharan S. | |
| dc.contributor.author | Ghermazion, A. | |
| dc.contributor.author | Çapan, Rifat | |
| dc.date.accessioned | 2019-10-17T08:00:14Z | |
| dc.date.available | 2019-10-17T08:00:14Z | |
| dc.date.issued | 2005 | en_US |
| dc.identifier.issn | 0042-207X | |
| dc.identifier.uri | https://doi.org/10.1016/j.vacuum.2004.09.023 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12462/7813 | |
| dc.description | Çapan, Rifat (Balıkesir Author) | en_US |
| dc.description.abstract | X-ray diffraction, atomic force microscopy and electrical studies were performed on 2-3 mu m thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline having a grain size of 32.1 nm. From room temperature current-voltage measurements, it was found that the charge transport mechanism was due to the thermionic emission over the potential barrier of 1.3 eV. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Pergamon-Elsevier Science Ltd | en_US |
| dc.relation.isversionof | 10.1016/j.vacuum.2004.09.023 | en_US |
| dc.rights | info:eu-repo/semantics/embargoedAccess | en_US |
| dc.subject | Diamond Films | en_US |
| dc.subject | Electrical Studies | en_US |
| dc.subject | Thermionic Emission | en_US |
| dc.title | Microstructural and electrical studies on diamond films | en_US |
| dc.type | article | en_US |
| dc.relation.journal | Vacuum | en_US |
| dc.contributor.department | Fen Edebiyat Fakültesi | en_US |
| dc.identifier.volume | 77 | en_US |
| dc.identifier.issue | 3 | en_US |
| dc.identifier.startpage | 231 | en_US |
| dc.identifier.endpage | 235 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
