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dc.contributor.authorGökden, Sibel
dc.date.accessioned2019-10-17T07:15:41Z
dc.date.available2019-10-17T07:15:41Z
dc.date.issued2004en_US
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.urihttps://doi.org/10.1016/j.physe.2004.03.008
dc.identifier.urihttps://hdl.handle.net/20.500.12462/7570
dc.description.abstractWe present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of electrons. Experimental results show that the drift velocity saturates at around v(d) approximate to 3.8 x 10(5) cm/s at an electric field of F approximate to 8.9 x 10(2) V/cm at 3.8 K. The theoretical calculations show that the enhancement of the momentum relaxation rate due to the production of non-drifting hot phonons reduces the drift velocity at high field. The reduction in the drift velocity increases with increasing population of non-drifting non-equilibrium phonons (LO phonons).en_US
dc.language.isoengen_US
dc.publisherElsevier Science Bven_US
dc.relation.isversionof10.1016/j.physe.2004.03.008en_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectGanen_US
dc.subjectHot Phononen_US
dc.subjectDrift Velocityen_US
dc.titleThe effect of hot phonons on the drift Velocity in GaN/AlGaN two dimensional electron gasen_US
dc.typearticleen_US
dc.relation.journalPhysica E-Low-Dimensional Systems & Nanostructuresen_US
dc.contributor.departmentFen Edebiyat Fakültesien_US
dc.identifier.volume23en_US
dc.identifier.issue1-2en_US
dc.identifier.startpage198en_US
dc.identifier.endpage203en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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