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dc.contributor.authorÇapan, Rifat
dc.contributor.authorDavis, Frank
dc.date.accessioned2019-10-16T11:48:02Z
dc.date.available2019-10-16T11:48:02Z
dc.date.issued2011en_US
dc.identifier.issn0254-0584
dc.identifier.urihttps://doi.org/10.1016/j.matchemphys.2010.09.025
dc.identifier.urihttps://hdl.handle.net/20.500.12462/7216
dc.descriptionÇapan, Rifat (Balikesir Author)en_US
dc.description.abstractIn this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34 X 10(-13) S cm(-1). The height of the potential barrier was determined to be 1.65 eV for this alternate layer LB film system.en_US
dc.language.isoengen_US
dc.publisherElsevier Science Saen_US
dc.relation.isversionof10.1016/j.matchemphys.2010.09.025en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin Filmsen_US
dc.subjectElectrical Propertiesen_US
dc.subjectCalixarenesen_US
dc.subjectLB Filmsen_US
dc.subjectAcid/Amine Alternate Layersen_US
dc.titleElectrical properties of a calix[4]acid/amine Langmuir-Blodgett thin filmen_US
dc.typearticleen_US
dc.relation.journalMaterials Chemistry and Physicsen_US
dc.contributor.departmentFen Edebiyat Fakültesien_US
dc.contributor.authorID0000-0002-2669-9169en_US
dc.identifier.volume125en_US
dc.identifier.issue3en_US
dc.identifier.startpage883en_US
dc.identifier.endpage886en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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