| dc.contributor.author | Özbek, Zikriye | |
| dc.contributor.author | Çapan, Rifat | |
| dc.contributor.author | Sarı, Hüseyin | |
| dc.contributor.author | Uzunoğlu, Tayfun | |
| dc.contributor.author | Davis, Frank | |
| dc.date.accessioned | 2019-10-16T10:41:37Z | |
| dc.date.available | 2019-10-16T10:41:37Z | |
| dc.date.issued | 2009 | en_US |
| dc.identifier.issn | 1454-4164 | |
| dc.identifier.issn | 1841-7132 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12462/6876 | |
| dc.description | Çapan, Rifat (Balikesir Author) | en_US |
| dc.description.abstract | Calix[8]acid/calix[4]amine alternate layer Metal-Langmuir-Blodgett film-Metal (M/LB/M) structures were fabricated onto an aluminized glass substrate. Film deposition results indicated that these molecules are suitable to deposit with a highly ordered alternate layer structure. Studies were made of the nano-layer structures' electrical properties such as I-V and C-f. By analyzing I-V curves and assuming a Schottky conduction mechanism, the barrier height was found to be 0.67 eV. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Natl Inst Optoelectronics | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | Calixarene | en_US |
| dc.subject | Langmuir-Blodgett Thin Films | en_US |
| dc.subject | Electrical Properties | en_US |
| dc.title | Electrical properties of Langmuir-Blodgett thin films using calixarene molecules | en_US |
| dc.type | article | en_US |
| dc.relation.journal | Journal of Optoelectronics and Advanced Materials | en_US |
| dc.contributor.department | Fen Edebiyat Fakültesi | en_US |
| dc.identifier.volume | 11 | en_US |
| dc.identifier.issue | 10 | en_US |
| dc.identifier.startpage | 1412 | en_US |
| dc.identifier.endpage | 1415 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
