dc.contributor.author | Uzunoğlu, Tayfun | |
dc.contributor.author | Sarı, Hüseyin | |
dc.contributor.author | Çapan, Rifat | |
dc.contributor.author | Namlı, Hilmi | |
dc.contributor.author | Turhan, Onur | |
dc.date.accessioned | 2019-10-16T10:41:27Z | |
dc.date.available | 2019-10-16T10:41:27Z | |
dc.date.issued | 2009 | en_US |
dc.identifier.issn | 1454-4164 | |
dc.identifier.issn | 1841-7132 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12462/6875 | |
dc.description | Çapan, Rifat (Balikesir Author) | en_US |
dc.description.abstract | Y-type 1,3-bis-(p-iminobenzoic acid) indane thin films with and without Zn2+ ions were grown by a LB technique to investigate the influence of the Zn2+ ions on their electrical properties. In this work, 1,3-bis-(p-iminobenzoic acid) indane molecules were deposited onto quartz crystal, glass and aluminium coated glass substrates, for optical and electrical measurements. A Quartz Crystal Microbalance (QCM) technique was used to monitor the reproducibility of the film growth. UV-visible spectroscopy was used to verify film deposition. From the electrical measurements, it was observed that Zn2+ ions affect the electrical properties of the LB films, by reducing the barrier height. | en_US |
dc.description.sponsorship | Ankara University Research Office (BAP) - AU-BAP 2003-07-45-016 | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Natl Inst Optoelectronics | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | 1,3-bis-(P-Iminobenzoic Acid) Indane | en_US |
dc.subject | Langmuir-Blodgett (LB) Thin Films | en_US |
dc.subject | Zn2+ Ions | en_US |
dc.subject | Electrical Properties1,3-bis-(P-Iminobenzoic Acid) Indane | en_US |
dc.subject | Langmuir-Blodgett (LB) Thin Films | en_US |
dc.subject | Zn2+ Ions | en_US |
dc.subject | Electrical Properties | en_US |
dc.title | Characterization of novel 1,3-bis-(p-iminobenzoic acid) indane langmuir-blodgett (lb) films, with and without zn2+ ions | en_US |
dc.type | article | en_US |
dc.relation.journal | Journal of Optoelectronics and Advanced Materials | en_US |
dc.contributor.department | Fen Edebiyat Fakültesi | en_US |
dc.identifier.volume | 11 | en_US |
dc.identifier.issue | 10 | en_US |
dc.identifier.startpage | 1408 | en_US |
dc.identifier.endpage | 1411 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |