Investigation of the effects of Cu layer thickness and annealing temperature under air atmosphere on the properties of Co/Cu multilayer films

Abstract

In this study, the suitability of Co/Cu multilayer films with different physical conditions (varying thickness values and systematic annealing processes) in magnetic technology applications is discussed. Co/Cu films were deposited by the sputtering technique. The effects of different thicknesses of non-magnetic (Cu) layers and annealing temperature on magneto-structural properties were investigated. Different thicknesses of Cu layers were determined as 34 nm, 10 nm, 4 nm. Additionally, two annealed situations were considered to investigate the annealing effect. While the first one is exposing the films to 80 & DEG;C and 130 & DEG;C for 240 s, second one is annealing the films at 180 & DEG;C for different exposure times (50 s and 150 s). All films that have different thicknesses of Cu layers crystallized in (111) plane of the face centered cubic (fcc) structure. The intensity of this peak increased with increasing Cu layers thickness. Variation in the thickness of Cu layers has an important effect on the film surface. Saturation magnetization (Ms), coercivity (Hc) and squareness (Mr/Ms, Mr: remanent magnetization) were considerably affected by variation of the Cu content and film surface caused by the change in the thickness of the Cu layers. The film with 4 nm Cu layer thickness has the highest Ms, lowest Hc values and high Mr/Ms ratio. This indicates magnetically high efficient compared to the other films in the same series. The fcc structure continued to exist for the films annealed at 80 & DEG;C and 130 & DEG;C for 240 s. It was found that the annealing procedure transfigured the film surface and the differences in Ms and Hc values can be mostly attributed to this transfiguration because of the same film content revealed. An increase in Ms value, and a slight decrease in Hc and Mr/Ms values were detected for the annealed film at 130 & DEG;C, compared to the film annealed at 80 & DEG;C. It was also seen that the film structure was damaged at 180 & DEG;C because of excessive heat transfer.