Chemical sensor properties and mathematical modeling of graphene oxide langmuir-blodgett thin films
Özet
Graphene oxide (GO) Langmuir-Blodgett (LB) thin films were prepared to use as chemical sensor element. The properties of GO LB thin film layers were characterized via Quartz crystal microbalance (QCM) method. Selectivity of the sensor to various organic vapors was investigated by surface plasmon resonance (SPR) and QCM techniques. Fick's equations were used for calculating the diffusion coefficients (D) values of organic vapors. It was observed that chemical gas sensing characteristics of the GO film sensor shows a large response to some hazardous organic vapors. Then, by using experimental measurements that obtained during this process, NARX-ANN-based mathematical model of frequency shift of the quartz resonator was designed. The results of NARX-ANN verify the efficiency of the designed model.
