Yazar "Teke, Ali" için listeleme
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4H-SiC photoconductive switching devices for use in high-power applications
Doğan, Seydi; Teke, Ali; Huang, Daming; Morkoc, Hadis H.; Roberts, CB; Parish, John; Ganguly, Biswa (Amer Inst Physics, 2003)Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar ... -
Active region dimensionality and quantum efficiencies of ingan leds from temperature dependent photoluminescence transients
Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit (Spie-Int Soc Optical Engineering, 2015)Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect ... -
AlGa(In)N/GaN yüksek elektron mobiliteli transistörlerde iki boyutlu elektron gazına ait sıcak elektron dinamiğinin incelenmesi.
Ilgaz, Aykut (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2011)Bu çalışmada Al(In)GaN/Ga(In)N HEMT yapıların sıcak elektron dinamiği deneysel ve teorik olarak çalışıldı. Deneysel kısımda ilk olarak örnekler metal organik kimyasal buhar depozisyonu (MOCVD) yöntemi ile safir alt taş ... -
AlxGa1-xN/GaN 2 boyutlu elektron gazının elektriksel ve optiksel özellikleri arasındaki ilişkinin incelenmesi
Bayrak, Salih Tolga (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2003)AIxGaı.xN/GaN heteroyapüardaki 2BEG -nin Elektriksel ve Optiksel karakterizasyonu Salih Tolga Bayrak Balıkesir Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı (Tez Danışmanı : Yrd. Doç. Dr Ali TEKE) Balıkesir, ... -
AlxGa1-xN/GaN çoklu kuantum kuyularının optiksel özellikleri
Şit, Zekiye (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2014)Bu çalışmada, c- doğrultuda safir alt taş üzerine Metal-Organik Kimyasal Buhar Biriktirme(MOCVD) tekniği ile büyütülen AlxGa1-xN/GaN çoklu kuantum kuyulu yapılar incelenmiştir. Yapıların optik özelliklerini incelemek için ... -
Analysis of a hot electron light emitting device at low and high electric and magnetic fields
Teke, Ali (Wiley-V C H Verlag GMBH, 2001)The electrical characterization of a tunable wavelength surface light-emitting device is reported. The device consists of p-GaAs and n-Ga1-xAlxAs heterojunction containing an inversion layer on the p-side, and GaAs quantum ... -
The applicability of a model to the degenerate InN
Gökden, Sibel; Teke, Ali; Baran, Roman (Natl Inst Optoelectronics, 2007)This paper presents a theoretical study of the carrier mobility in Indium Nitride (InN) material system. We used a model, referred to as alpha-model, based on a simplified relationship between the donor and dislocation ... -
Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (IOP Publishing Ltd, 2008)We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties ... -
Comparison of photoluminescence properties of Zn-and O-polar ZnO thin films
Tülek, Remziye; Parlak, Mehmet; Teke, Ali (National Institute of Optoelectronics, 2023)Optical properties of Zn- and O-polar Zinc Oxide (ZnO) thin films grown by molecular beam epitaxy (MBE) were investigated by the temperature and excitation intensity dependent photoluminescence (PL) measurements. The ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
A comprehensive review of ZnO materials and devices
Özgür, Ümit; Alivov, YI.; Teke, Ali; Reshchikov, MA; Doğan, Seydi; Avrutin, V; Cho, SJ.; Morkoc, H. (Amer Inst Physics, 2005)The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room ... -
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Arslan, Engin; Turhan, Sevil; Gökden, Sibel; Teke, Ali; Özbay, Ekmel (Elsevier Science Sa, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
The effect of aln interlayer thicknesses on scattering processes in lattice-matched alınn/gan two-dimensional electron gas heterostructures
Teke, Ali; Gökden, Sibel; Tülek, Remziye; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, H.; Morkoc, H (IOP Publishing Ltd, 2009)The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. ... -
Effect of thermal treatment on ZnO substrate for epitaxial growth
Gu, Xıng; Sabuktagin, Shaier; Teke, Ali; Johnstone ,Daniel; Morkoç, Hadis; Nemeth, Bill; Jeff, Nause (Springer, 2004)ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical ... -
The electrical, optical, and structural properties of GaN epitaxial layers grown on si(111) substrate with SiNx interlayers
Arslan, Engin; Duygulu, Özgür; Kaya, Ali Arslan; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Academic Press Ltd, 2009)The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ... -
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (EDP Sciences S A, 2011)In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ... -
Epitaxy of highly optical efficient GaN on O and Zn face ZnO
Gu, Xing; Reshchikov, Michael A.; He, Lei; Teke, Ali; Yun, Feng; Johnstone, Daniel K.; Nemeth, Bill; Nause, Jeff E.; Morkoç, Hadis D. (2003)ZnO is a highly efficient photon emitter, has optical and piezoelectric properties that are attractive for a variety of applications. Due to its stacking order and close lattice to GaN, it is also considered as a substrate ... -
Eriyik ve buhar tekniği ile büyütülen yüksek kalite ZnO kristallerinin optiksel özellikleri
Kuzucu, Ayşe (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2007)Bu çalısmada, eriyik ve buhar tekniği ile büyütülen yüksek kalite ZnO kristallerinin optiksel özellikleri incelenmistir. Büyütme sonrası farklı gaz ortamlarında ısısal tavlamalara tabi tutulan örneklerin yansıma ve emisyon ... -
Excitonic fine structure and recombination dynamics in single-crystalline ZnO
Teke, Ali; Özgür, Ümit; Doğan, Seydi; Gu, Xing; Morkoç, Hadis; Nemeth, Bill; Nause, J.; Everitt, Henry O. (Amer Chemical Soc, 2004)The optical properties of a high quality bulk ZnO, thermally post treated in a forming gas environment are investigated by temperature dependent continuous wave and time-resolved photoluminescence (PL) measurements. Several ... -
Farklı alaşım aranlarında AlInGaN dörtlü yapıların transport özellikleri
Baran, Aslı (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2018)Bu tez çalışmasında, Metal Organik Kimyasal Buhar Biriktirmesi (MOCVD) yöntemiyle safir (Al2O3) alttaş üzerine iki farklı alaşım oranına sahip (A ve B kodlu) AlxInyGa1-x-yN/GaN heteroyapıların transport özellikleri incelendi. ...
