Yazar "Reshchikov, Michael A." için listeleme
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Epitaxy of highly optical efficient GaN on O and Zn face ZnO
Gu, Xing; Reshchikov, Michael A.; He, Lei; Teke, Ali; Yun, Feng; Johnstone, Daniel K.; Nemeth, Bill; Nause, Jeff E.; Morkoç, Hadis D. (2003)ZnO is a highly efficient photon emitter, has optical and piezoelectric properties that are attractive for a variety of applications. Due to its stacking order and close lattice to GaN, it is also considered as a substrate ... -
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
Gu, Xing; Reshchikov, Michael A.; Teke, Ali; Johnstone, Daniel; Morkoç, Hadis; Nemeth, Bill; Nause, Jeff (Amer Inst Physics, 2004)ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in ... -
Photoluminescence from freestanding GaN with (101̄0) orientation
Reshchikov, Michael A.; Teke, Ali; Maruska, Herbert Paul; Print Email Hill, David W.; Morkoç, Hadis D. (2003)Freestanding GaN templates with (101¯0) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO 2 and subsequent removal of the substrate by wet chemical etching. Photoluminescence ...
