Yazar "Morkoç, Hadis" için listeleme
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Active region dimensionality and quantum efficiencies of ingan leds from temperature dependent photoluminescence transients
Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit (Spie-Int Soc Optical Engineering, 2015)Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect ... -
Effect of thermal treatment on ZnO substrate for epitaxial growth
Gu, Xıng; Sabuktagin, Shaier; Teke, Ali; Johnstone ,Daniel; Morkoç, Hadis; Nemeth, Bill; Jeff, Nause (Springer, 2004)ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical ... -
Excitonic fine structure and recombination dynamics in single-crystalline ZnO
Teke, Ali; Özgür, Ümit; Doğan, Seydi; Gu, Xing; Morkoç, Hadis; Nemeth, Bill; Nause, J.; Everitt, Henry O. (Amer Chemical Soc, 2004)The optical properties of a high quality bulk ZnO, thermally post treated in a forming gas environment are investigated by temperature dependent continuous wave and time-resolved photoluminescence (PL) measurements. Several ... -
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
Gu, Xing; Reshchikov, Michael A.; Teke, Ali; Johnstone, Daniel; Morkoç, Hadis; Nemeth, Bill; Nause, Jeff (Amer Inst Physics, 2004)ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in ... -
Improvement of carrier injection symmetry and quantum efficiency in ıngan light-emitting diodes with mg delta-doped barriers
Zhang, F.; Can, Nuri; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ümit; Morkoç, Hadis (Amer Inst Physics, 2015)The effect of delta-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference ... -
Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films
Özgür, Ümit; Teke, Ali; Liu, Chunli; Cho, S.J.; Morkoç, Hadis; Everitt, Henry O. (Amer Inst Physics, 2004)Stimulated emission (SE) was measured from ZnO thin films grown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence (PL), transmission, and reflection spectra ...
