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The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tülek, Remziye; Arslan, Engin; Bayraklı, Aydın; Turhan, Sevil; Gökden, Sibel; Duygulu, Özgür; Kaya, Ali; Fırat, Tezer (Elsevier Science Sa, 2014)One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline ...
