Yazar "Gökden, Sibel" için listeleme
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AlGa(In)N/AlN/GaN heteroeklem yapıların enerji bant profillerinin ve taşıyıcı yoğunluklarının Nextnano3 simülasyon programı kullanarak incelenmesi
Turhan, Sevil (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2011)Bu çalışmada, GaN tabanlı yüksek elektron mobiliteli transistör yapıların cihaz performanslarını geliştirmek için Nextnano3 simülasyon programı kullanılarak büyütme parametrelerinin optimizasyonu araştırılmıştır. Kutuplanmanın ... -
The analysis of scattering mechanisms in GaN by relaxation time approximation and the comparison by the transport to quantum scattering time ratios
Gökden, Sibel (Edp Sciences S A, 2007)The effects of conventional scattering mechanisms on the electron Hall mobility in GaN are calculated and analysed. The ratios of the transport to quantum scattering time are also calculated and the ratio is evaluated in ... -
The applicability of a model to the degenerate InN
Gökden, Sibel; Teke, Ali; Baran, Roman (Natl Inst Optoelectronics, 2007)This paper presents a theoretical study of the carrier mobility in Indium Nitride (InN) material system. We used a model, referred to as alpha-model, based on a simplified relationship between the donor and dislocation ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Arslan, Engin; Turhan, Sevil; Gökden, Sibel; Teke, Ali; Özbay, Ekmel (Elsevier Science Sa, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures
Gökden, Sibel (Elsevier Science Bv, 2004)We present the effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, remote and background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in ... -
The effect of aln interlayer thicknesses on scattering processes in lattice-matched alınn/gan two-dimensional electron gas heterostructures
Teke, Ali; Gökden, Sibel; Tülek, Remziye; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, H.; Morkoc, H (IOP Publishing Ltd, 2009)The scattering mechanisms governing the transport properties of high mobility AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures with various AIN spacer layer thicknesses from zero to 2 nm were presented. ... -
The effect of electrons and phonons scattering from interface roughness and well-width fluctuations on low-field mobility of 2DEG in GaN/AlGaN
Gökden, Sibel (Elsevier Science Bv, 2004)The influence of interface roughness on the mobility of two-dimensional electrons in GaN/AlGaN HEMT structures are theoretically investigated in light of the measured mobility. Experimental mobility of 2912 cm(2)/V s at ... -
The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tülek, Remziye; Arslan, Engin; Bayraklı, Aydın; Turhan, Sevil; Gökden, Sibel; Duygulu, Özgür; Kaya, Ali; Fırat, Tezer (Elsevier Science Sa, 2014)One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline ... -
The effect of hot phonons on the drift Velocity in GaN/AlGaN two dimensional electron gas
Gökden, Sibel (Elsevier Science Bv, 2004)We present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phonon production ... -
The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure
Gökden, Sibel; Baradan, Robert; Balkan, Naci; Mazzucato, Simone (Elsevier Science Bv, 2004)We report the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental mobility ... -
The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN
Zanato, D; Gökden, Sibel; Balkan, Naci; Ridley, Brian; Schaff, William J. (IOP Publishing Ltd, 2004)We present the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental ... -
Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN
Gökden, Sibel; Balkan, Naci; Ridley, B.K (Iop Publishing Ltd, 2003)We report on the studies of steady-state high-field drift velocity in GaN/AlGaN HEMT structures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of ... -
The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures
Gökden, Sibel; Ilgaz, Aykut; Balkan, Naci; Mazzucato, Simone (Elsevier Science Bv, 2004)The effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in GaN/AlGaN heterostructures ... -
Electron transport mechanism in GaN/AlGaN HEMT structures
Gökden, Sibel (2003)The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall coefficient, ... -
Electron transport mechanism in GaN/AlGaN HEMT structures
Gökden, Sibel (2003)The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall coefficient, resistivity, ... -
Energy and momentum relaxation of hot electrons in GaN/AlGaN
Balkan, Naci; Arıkan, Mehmet Çetin; Gökden, Sibel; Tilak, Vinayak; Schaff, B. J.; Shealy, RJ (IOP Publishing Ltd, 2002)We report the experimental studies of hot-electron energy and momentum relaxation in the steady state in GaN/AlGaN HEMT structures with a high two-dimensional electron density of n = 1.5 x 10(13) cm(-2). From the ... -
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (EDP Sciences S A, 2011)In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ... -
Epitaksiyel grafende saçılma mekanizmaları
Ağızaçmak, Selman (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2019)Bu çalışmada, SiC alt taş üzerine büyütülen grafenin sıcaklığa bağlı (12- 300K) Hall etkisi ölçümleri gerçekleştirildi. Bu Hall verilerine ilk olarak, Basit Paralel İletim Ayrıştırma Yöntemi (SPCEM) uygulanarak, 3 boyutlu ... -
Galn/GaAs kuantum kuyulu yapılarda alaşım düzensizliği ve arayüzey pürüzlülüğü saçılması
Denizli, Tuğba (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2006)Bu çalışmada, GaInP/GaAs katkısız tekli kuantum kuyulu yapıda elektron Hall mobilitesi üzerine alaşım ve ara yüzey pürüzlülüğünden (IFR) ileri gelen saçılma mekanizmalarının etkisi teorik olarak araştırılmıştır. Teorik ...
