Yazar "Can, Nuri" için listeleme
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Active region dimensionality and quantum efficiencies of ingan leds from temperature dependent photoluminescence transients
Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit (Spie-Int Soc Optical Engineering, 2015)Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect ... -
Enhancement of optical and structural quality of semipolar (11(2)over-bar2) gan by introducing nanoporous sinx interlayers
Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy (Spie-Int Soc Optical Engineering, 2015)Enhancement of optical and structural quality of semipolar (11 (2) over bar2) GaN grown by metal-organic chemical vapor deposition on planar m-sapphire substrates was achieved by using an in situ epitaxial lateral overgrowth ... -
Improvement of carrier injection symmetry and quantum efficiency in ıngan light-emitting diodes with mg delta-doped barriers
Zhang, F.; Can, Nuri; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ümit; Morkoç, Hadis (Amer Inst Physics, 2015)The effect of delta-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference ... -
Improvement of optical quality of semipolar (11(2)over-bar2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth
Monavarian, Morteza; Izyumskaya, Natalia; Mueller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit (Amer Inst Physics, 2016)Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ ... -
Indium-incorporation efficiency in semipolar (11(2)over-bar2) oriented ingan-based light emitting diodes
Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy (Spie-Int Soc Optical Engineering, 2015)Reduced electric field in semipolar (11 (2) over bar2) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar ... -
InGaN/GaN ışık yayan diyotların kuantum verimlerinin araştırılması
Can, Nuri (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2016)Bu tez çalışmasında InGaN/GaN hetero ve kuantum yapılı ışık yayan diyotların kuantum verimliliklerinin geliştirilmesi amaçlanmıştır. Buna yönelik olarak, büyütme yaklaşımlarının ve yapısal tasarımların kuantum verimliliği ... -
Polar ve polar olmayan doğrultularda büyütülen GaN tabakaların optik özellikleri
Can, Nuri (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2011)Bu çalışmada, biri polar diğeri ise polar olmayan doğrultularda büyütülen GaN tabakaların optik özellikleri incelenmiştir. GaN tabakalar Metal Organik Kimyasal Buhar Depolama tekniği ile safirin c- ve a- düzlemleri üzerine ...
