Yazar "Balkan, Naci" için listeleme
-
The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure
Gökden, Sibel; Baradan, Robert; Balkan, Naci; Mazzucato, Simone (Elsevier Science Bv, 2004)We report the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental mobility ... -
The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN
Zanato, D; Gökden, Sibel; Balkan, Naci; Ridley, Brian; Schaff, William J. (IOP Publishing Ltd, 2004)We present the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental ... -
Effect of non-drifting hot phonons on high-field drift velocity in GaN/AlGaN
Gökden, Sibel; Balkan, Naci; Ridley, B.K (Iop Publishing Ltd, 2003)We report on the studies of steady-state high-field drift velocity in GaN/AlGaN HEMT structures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of ... -
The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures
Gökden, Sibel; Ilgaz, Aykut; Balkan, Naci; Mazzucato, Simone (Elsevier Science Bv, 2004)The effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in GaN/AlGaN heterostructures ... -
Energy and momentum relaxation of hot electrons in GaN/AlGaN
Balkan, Naci; Arıkan, Mehmet Çetin; Gökden, Sibel; Tilak, Vinayak; Schaff, B. J.; Shealy, RJ (IOP Publishing Ltd, 2002)We report the experimental studies of hot-electron energy and momentum relaxation in the steady state in GaN/AlGaN HEMT structures with a high two-dimensional electron density of n = 1.5 x 10(13) cm(-2). From the ... -
In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
Mazzucato, S; Balkan, Naci; Teke, Ali; Erol, Ayşe; Potter, RJ; Arıkan, M. Çetin; Marie, X; Fontaine, C (Amer Inst Physics, 2003)We have investigated in-plane photovoltage (IPV) and photoluminescence (PL) in sequentially grown Ga0.8In0.2As/GaAs and Ga0.8In0.2N0.015As0.985/GaAs-quantum wells. Temperature, excitation intensity, spectral and time ... -
Momentum relaxation of electrons in n-type bulk GaN
Zanato, D; Gökden, Sibel; Balkan, Naci; Ridley, Brian; Schaff, Wiliam J (Ademic Press Ltd-Elsevier Science Ltd, 2003)We report on Hall mobility and carrier density measurements on n-type GaN epilayers grown on sapphire by MBE. The results are discussed using a theoretical model that takes into account the most important scattering ... -
Optimisation of the tunable wavelength hot electron light emitter
Teke, Ali; Balkan, Naci (1999)We report on the optimization of the hot electron tunable wavelength surface light emitting device developed by us. The device consists of a p-GaAs, and n-Ga1-cursive Greek chi Alcursive Greek chi As heterojunction containing ... -
Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells
Mazzucato, S; Erol, Ayşe; Potter, R; Balkan, Naci; Marie, X; Boland-Thoms, A; Teke, Ali (Elsevier Science Bv, 2003)We have studied the optical quality of sequentially grown undoped Ga0.8In0.2As and Ga0.8In0.2N0.015As0.985 quantum wells (QWs). Spectral and time-resolved in-plane photovoltage (IPV) and photo-induced transient spectroscopy ... -
A tunable hot-electron light emitter
Teke, Ali; Gupta, R.; Balkan, Naci; vanderVleuten, W.; Wolter, JH. (IOP Publishing LTD, 1997)We demonstrate the operation of a novel tunable wavelength surface emitting device. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunction containing an inversion layer on the p-side, and GaAs quantum wells on the ... -
Tunable wavelength light emission from longitudinally biased p-GaAs/n-Ga1-xAlxAs junction containing GaAs quantum wells: Non-linear dynamics
Balkan, Naci; Teke, Ali; Gupta, Rita (Elsevier Science Bv, 1999)We report on the operation and non-linear dynamics of a hot electron device that emits light with wavelength tunability, The device consists of p-GaAs/n-Ga-1 -xAlxAs heterojunction containing an inversion layer on the ...