Yazar "Arslan, Engin" için listeleme
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Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (IOP Publishing Ltd, 2008)We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Arslan, Engin; Turhan, Sevil; Gökden, Sibel; Teke, Ali; Özbay, Ekmel (Elsevier Science Sa, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tülek, Remziye; Arslan, Engin; Bayraklı, Aydın; Turhan, Sevil; Gökden, Sibel; Duygulu, Özgür; Kaya, Ali; Fırat, Tezer (Elsevier Science Sa, 2014)One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline ... -
The electrical, optical, and structural properties of GaN epitaxial layers grown on si(111) substrate with SiNx interlayers
Arslan, Engin; Duygulu, Özgür; Kaya, Ali Arslan; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Academic Press Ltd, 2009)The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ... -
Transport properties of epitaxial graphene grown on SIC substrate
Ağızaçmak, Selman; Tülek, Remziye; Gökden, Sibel; Teke, Ali; Arslan, Engin; Aygar, Ayşe Melis; Özbay, Ekmel (National Institute of Optoelectronics, 2017)In this study, the Hall effect measurement of graphene on SiC substrate was carried out as a function of temperature (12-300 K). Hall data were first analyzed to extract the temperature dependent mobilities and carrier ...
