Yazar "Özbay, Ekmel" için listeleme
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Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (IOP Publishing Ltd, 2008)We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Arslan, Engin; Turhan, Sevil; Gökden, Sibel; Teke, Ali; Özbay, Ekmel (Elsevier Science Sa, 2013)Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport ... -
Effects of thermal annealing on the morphology of the alxga(1-x)n films
Çörekci, Süleyman; Tekeli, Zeliha; Çakmak, Mükerrem; Özçelik, Süleyman; Dinç, Yavuz; Zeybek, Orhan; Özbay, Ekmel (Elsevier Sci Ltd, 2009)Effects of thermal annealing on the morphology of the AlxGa(1-x)N films with two different high Al-contents (x=0.43 and 0.52) have been investigated by atomic force microscopy (AFM). The annealing treatments were performed ... -
The electrical, optical, and structural properties of GaN epitaxial layers grown on si(111) substrate with SiNx interlayers
Arslan, Engin; Duygulu, Özgür; Kaya, Ali Arslan; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Academic Press Ltd, 2009)The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ... -
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (EDP Sciences S A, 2011)In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ... -
Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures
Lisesivdin, Sefer Bora; Acar, Selim; Kasap, Mahmut; Özçelik, Süleyman; Gökden, Sibel; Özbay, Ekmel (Iop Publishing Ltd, 2007)Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field ... -
Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Natl Inst Optoelectronics, 2014)In this work, the hot-electron transport properties of AlInN/AlN/GaN HEMT structures with a high sheet electron density of 4.84x10(13) cm(-2) grown by MOCVD (Metal Organic Chemical Vapor Deposition) on sapphire substrate ... -
Transport properties of epitaxial graphene grown on SIC substrate
Ağızaçmak, Selman; Tülek, Remziye; Gökden, Sibel; Teke, Ali; Arslan, Engin; Aygar, Ayşe Melis; Özbay, Ekmel (National Institute of Optoelectronics, 2017)In this study, the Hall effect measurement of graphene on SiC substrate was carried out as a function of temperature (12-300 K). Hall data were first analyzed to extract the temperature dependent mobilities and carrier ...
