Yazar "Özçelik, Süleyman" için listeleme
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An/p-GaAs1-xPx/n-GaAs yapılı P-N ekleme diyotun tavlanma sıcaklıklarına göre elektriksel karakterizasyonu
Mutlu, Tuğçe (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2010)Bu çalışmada p-GaAs1-xPx/n-GaAs yapısı, Moleküler Demet Epitaksi (MBE) sisteminde büyütüldü. Bu yapının üzerine omik altın (Au) kontaklar yüksek vakum termal buharlaştırma sisteminde alındı. İletken teller gümüş pasta ... -
Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (IOP Publishing Ltd, 2008)We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties ... -
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa Kemal; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel (Amer Inst Physics, 2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ... -
Developing of dual junction GaInP/GaAs solar cell devices: effects of different metal contacts
Ataser, Tuğçe; Sönmez, Nihan Akın; Özen, Yunus; Özdemir, Veysel; Zeybek, Orhan; Özçelik, Süleyman (Springer, 2018)DJ GaInP/GaAs SC structure was designed by using analytical solar cell model. The electrical parameters (J(sc), V-oc, FF and eta) were calculated by determining optimum conditions for improving the performance of the SCs. ... -
Effects of thermal annealing on the morphology of the alxga(1-x)n films
Çörekci, Süleyman; Tekeli, Zeliha; Çakmak, Mükerrem; Özçelik, Süleyman; Dinç, Yavuz; Zeybek, Orhan; Özbay, Ekmel (Elsevier Sci Ltd, 2009)Effects of thermal annealing on the morphology of the AlxGa(1-x)N films with two different high Al-contents (x=0.43 and 0.52) have been investigated by atomic force microscopy (AFM). The annealing treatments were performed ... -
The electrical, optical, and structural properties of GaN epitaxial layers grown on si(111) substrate with SiNx interlayers
Arslan, Engin; Duygulu, Özgür; Kaya, Ali Arslan; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Academic Press Ltd, 2009)The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ... -
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (EDP Sciences S A, 2011)In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ... -
An examination of the GaInP/GaInAs/Ge triple junction solar cell with the analytical solar cell model
Ataser, Tuğçe; Öztürk, Mustafa Kemal; Zeybek, Orhan; Özçelik, Süleyman (Polish Acad Sciences Inst Physics, 2019)The photovoltaic energy is one of the most popular topics of research in the field of clean energy sources. It benefits directly from the sun, and has been accepted as a promising technology for the future. To this end, ... -
Fractal size, occupied fraction study with annealing of heterostructure based alxga1-xn
Zeybek, Orhan; Ayaz, Ahmet; Öztürk, Mustafa Kemal; Davarpanah, Abdol Mahmood; Barrett, Steve D.; Bayırlı, Mehmet; Özçelik, Süleyman (Springer, 2018)In this study, numerical analysis of temperature variation for surface structure in AlxGa1-xN thin film grown by metal organic chemical vapour deposition has been performed. Numerical studies were carried out over morphologic ... -
İki eklemli GaXIn1-XP/GaAs güneş hücrelerinin tasarımı, epitaksiyel büyütülmeleri ve hücre fabrikasyonu
Ataşer, Tuğçe (Balıkesir Üniversitesi Fen Bilimleri Enstitüsü, 2017)Bu çalışmada, tek eklemli GaAs, iki eklemli GaInP/GaAs ve iki eklemli Ga1-yInyP/Ga1-xInxAs güneş hücre yapılarının analitik güneş hücre modeline göre tasarımları yapıldı. Tasarımı yapılan güneş hücrelerinin teorik olarak ... -
Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures
Lisesivdin, Sefer Bora; Acar, Selim; Kasap, Mahmut; Özçelik, Süleyman; Gökden, Sibel; Özbay, Ekmel (Iop Publishing Ltd, 2007)Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field ... -
Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures
Ilgaz, Aykut; Gökden, Sibel; Tülek, Remziye; Teke, Ali; Özçelik, Süleyman; Özbay, Ekmel (Natl Inst Optoelectronics, 2014)In this work, the hot-electron transport properties of AlInN/AlN/GaN HEMT structures with a high sheet electron density of 4.84x10(13) cm(-2) grown by MOCVD (Metal Organic Chemical Vapor Deposition) on sapphire substrate ...
